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inchange semiconductor product specification silicon pnp power transistors bd234 bd236 BD238 description ? ? with to-126 package ? complement to type bd233/235 /237 applications ? for medium power linear and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit bd234 -45 bd236 -60 v cbo collector-base voltage BD238 open emitter -100 v bd234 -45 bd236 -60 v ceo collector-emitter voltage BD238 open base -80 v v ebo emitter -base voltage open collector -5 v i c collector current (dc) -2 a i cm collector current-peak -6 a p c collector power dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors bd234 bd236 BD238 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-1a; i b =-0.1a -0.6 v v be base-emitter on voltage i c =-1a ; v ce =-2v -1.3 v bd234 -45 bd236 -60 v ceo(sus) collector-emitter sustaining voltage BD238 i c =-0.1a; i b =0 -80 v bd234 v cb =-45v; i e =0 bd236 v cb =-60v; i e =0 i cbo collector cut-off current BD238 v cb =-100v; i e =0 -100 | a i ebo emitter cut-off current v eb =-5v; i c =0 -1 ma h fe-1 dc current gain i c =-150ma ; v ce =-2v 40 h fe-2 dc current gain i c =-1a ; v ce =-2v 25 f t transition frequency i c =-250ma; v ce =-10v 3 mhz
inchange semiconductor product specification 3 silicon pnp power transistors bd234 bd236 BD238 package outline fig.2 outline dimensions

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